Semiconductor device with heat-resistant gate

Details Semiconductor device with heat-resistant gate Semiconductor device with heat-resistant gate

2011-01-11

2011-01-11

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257SE21133, C257SE21318, C438S278000, C438S582000, C438S587000, C438S646000

Reexamination Certificate

active

07868360

ABSTRACT:
There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The gate electrodes of tantalum can withstand this heat treatment.

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