Apparatus and method for isolating integrated circuit...

Details Apparatus and method for isolating integrated circuit... Apparatus and method for isolating integrated circuit...

2011-06-28

2011-06-28

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S322000, C438S424000, C438S427000, C438S435000

Reexamination Certificate

active

07968418

ABSTRACT:
An isolation trench structure includes both a deep trench isolation (DTI) trench and a shallow trench isolation (STI) trench. The DTI trench can be formed by etching a deeper, narrower trench in a substrate and filling the deeper trench with one or more materials (such as an oxide). The STI trench can be formed by etching a shallower, wider trench in the substrate and filling the shallower trench with one or more materials (such as an oxide). The STI trench surrounds a portion of the DTI trench, such as by completely encircling an upper portion of the DTI trench. The DTI and STI trenches are filled during different operations, and the DTI and STI trenches can be filled with the same material(s) or with different material(s).

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