Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2011-03-08
2011-03-08
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C438S510000, C438S149000
Reexamination Certificate
active
07902041
ABSTRACT:
An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
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Chinese Office Action (Application No. 200810090719.3) dated Sep. 1, 2010.
Ohnuma Hideto
Yamazaki Shunpei
Luu Chuong A.
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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