Semiconductor integrated circuit apparatus and electronic...

Details Semiconductor integrated circuit apparatus and electronic... Semiconductor integrated circuit apparatus and electronic...

2011-08-23

2011-08-23

Donovan, Lincoln (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Specific identifiable device, circuit, or system

With specific source of supply or bias voltage

C323S312000

Reexamination Certificate

active

08004346

ABSTRACT:
Semiconductor integrated circuit apparatus and electronic apparatus having a leakage current detection circuit where arbitrarily set leakage current detection ratio does not depend on power supply voltage, temperature, or manufacturing variations, and where leakage current detection is straightforward. Semiconductor integrated circuit apparatus extracts a stable potential from the center of two NchMIS transistors, amplifies drain current of an NchMOS transistor taking this potential as a gate potential to a current value of an arbitrary ratio using current mirror circuit, makes this current value flow through NchMOS transistor with the gate and drain connected, and applies drain potential of this NchMOS transistor to the gate of leakage current detection NchMOS transistor.

REFERENCES:
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patent: 5793040 (1998-08-01), Oguchi et al.
patent: 5834967 (1998-11-01), Kuroda et al.
patent: 6157259 (2000-12-01), Dasgupta
patent: 6958597 (2005-10-01), Lin et al.
patent: 7132874 (2006-11-01), McCorquodale et al.
patent: 2006/0186472 (2006-08-01), Ito
patent: 2007/0045744 (2007-03-01), Ito
patent: 9-130232 (1997-05-01), None
Kobayashi et al, “Self-adjusting Threshold-Voltage Scheme (SATS) for Low-Voltage High-Speed Operation”, IEEE 1994 Custom Integrated Circuits Conference, pp. 271-274.
English language abstract of JP 9-130232.

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