Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-01-04

2011-01-04

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S700000, C438S710000, C438S720000, C438S719000, C438S296000, C257S513000, C257S327000, C257SE21090, C257SE21238, C257SE21258

Reexamination Certificate

active

07863151

ABSTRACT:
A manufacturing method for manufacturing a super-junction semiconductor device forms an oxide film and a nitride film on an n-type epitaxial layer exhibiting high resistance on an n-type semiconductor substrate exhibiting low resistance. The portion of the nitride film in the scribe region is left unremoved by patterning and an alignment marker is opened through the nitride film. After opening a trench pattern in the oxide film, trenches having a high aspect ratio are formed. The portion of the oxide film outside the scribe region is removed and a p-type epitaxial layer is buried in the trenches. The overgrown p-type epitaxial layer is polished with reference to the nitride film, the polished surface is finished by etching, and the n-type epitaxial layer surface is exposed.

REFERENCES:
patent: 7402522 (2008-07-01), Hsieh et al.
patent: 2005/0221547 (2005-10-01), Yamauchi et al.
patent: 2007/0072398 (2007-03-01), Shibata et al.
patent: 2005-317905 (2005-11-01), None
patent: 2007-096137 (2007-04-01), None
patent: 2007-201499 (2007-08-01), None

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