Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-01-25
2011-01-25
Picardat, Kevin M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S347000, C257S350000, C257S351000, C257S369000, C257S628000
Reexamination Certificate
active
07875960
ABSTRACT:
A semiconductor structure with an insulating layer on a silicon substrate, a plurality of electrically-isolated silicon-on-insulator (SOI) regions separated from the substrate by the insulating layer, and a plurality of electrically-isolated silicon bulk regions extending through the insulating layer to the substrate. Each of one number of the SOI regions is oriented with a first crystal orientation and each of another number of the SOI regions is oriented with a second crystal orientation that differs from the first crystal orientation. The bulk silicon regions are each oriented with a third crystal orientation. Damascene or imprinting methods of forming the SOI regions and bulk silicon regions are also provided.
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Hsu Louis Lu-Chen
Mandelman Jack Allan
Tonti William Robert
Au Bac H
International Business Machines - Corporation
Nock James R.
Picardat Kevin M
Wood Herron & Evans LLP
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