Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2011-04-19
2011-04-19
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S432000, C257SE31061
Reexamination Certificate
active
07928529
ABSTRACT:
A semiconductor device that attenuates light to the circuit element area is provided. The semiconductor device includes light-sensitive element area formed on substrate and a circuit element area formed on the substrate. Additionally, a multilayer wiring area is formed on circuit element area. A Tantalum film (which is generally made of tantalum or a tantalum compound) is formed on the surface of the multilayer wiring area to attenuate incident light on circuit element area.
REFERENCES:
patent: 2005/0285215 (2005-12-01), Lee et al.
patent: 2006/0113622 (2006-06-01), Adkisson et al.
patent: 2001-320079 (2001-11-01), None
Brady III Wade J.
Bryant Kiesha R
Patti John J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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