Bulk acoustic wave device with a semiconductor layer

Details Bulk acoustic wave device with a semiconductor layer Bulk acoustic wave device with a semiconductor layer

2011-07-12

2011-07-12

Dougherty, Thomas M (Department: 2837)

Electrical generator or motor structure

Non-dynamoelectric

Piezoelectric elements and devices

Reexamination Certificate

active

07977850

ABSTRACT:
A bulk acoustic wave device includes a first electrode, a second electrode, a piezoelectric layer arranged between the first and second electrodes and a semiconductor layer arranged between the first and second electrodes. The semiconductor layer is electrically isolated from the first electrode.

REFERENCES:
patent: 7098573 (2006-08-01), Stommer
patent: 7362035 (2008-04-01), Jang et al.
patent: 2009/0295506 (2009-12-01), Handtmann et al.

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