Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-07-12
2011-07-12
Le, Thong Q (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185220, C365S185250
Reexamination Certificate
active
07978531
ABSTRACT:
Provided is a nonvolatile memory that realizes a high-speed verify operation. During verify writing/erasing, the writing/erasing and reading are performed at the same time. As to a circuit that performs a verify operation, for instance, there is obtained a construction where the output from a sense amplifier (102) that performs reading is connected to a switch which switches an operation voltage applied to a memory cell in accordance with a verify signal Sv, and the verify operation is finished concurrently with having the verify signal Sv switched. By obtaining such circuit construction and simultaneously performing writing/erasing and reading, it becomes possible to perform high-speed verify writing/erasing.
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Husch & Blackwell LLP
Le Thong Q
Semiconductor Energy Laboratory Co,. Ltd.
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