Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

2011-01-04

2011-01-04

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S079000, C257S103000, C257SE33003, C257SE33005, C257SE33008

Reexamination Certificate

active

07863623

ABSTRACT:
A semiconductor light emitting device includes a substrate11including a group III-V nitride semiconductor; a first-conductivity-type layer12formed on the substrate11, the first-conductivity-type layer including a plurality of group III-V nitride semiconductor layers of first conductivity type; an active layer13formed on the first semiconductor layer12; and a second-conductivity-type layer14formed on the active layer13, the second-conductivity-type layer including a group III-V nitride semiconductor layer of second conductivity type. The first-conductivity-type layer12includes an intermediate layer23made of Ga1-xInxN (0<x<1).

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