MIS gate structure type HEMT device and method of...

Details MIS gate structure type HEMT device and method of... MIS gate structure type HEMT device and method of...

2011-08-30

2011-08-30

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257SE29246

Reexamination Certificate

active

08008689

ABSTRACT:
A normally-off operation type HEMT device excellent in characteristics can be realized. A two-dimensional electron gas region is formed in a periphery of a hetero-junction interface of a base layer and a barrier layer, so that access resistance in an access portion, that is, between a drain and a gate and between a gate and a source is sufficiently lowered, and at the same time, a P-type region is formed immediately under the gate. This realizes a normally-off type HEMT device having a low on-resistance. Further, when a film thickness of an insulating layer is defined as t (nm) and a relative permittivity of a substance forming the insulating layer is defined as k, a threshold voltage as high as +3 V or more can be attained by satisfying k/t≦0.85 (nm−1).

REFERENCES:
patent: 7135347 (2006-11-01), Miyoshi et al.
patent: 2007/0187718 (2007-08-01), Suzuki et al.

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