Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2011-06-07
2011-06-07
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C257SE31111, C438S455000
Reexamination Certificate
active
07955887
ABSTRACT:
Integrated circuits having complementary metal-oxide semiconductor (CMOS) and photonics circuitry and techniques for three-dimensional integration thereof are provided. In one aspect, a three-dimensional integrated circuit comprises a bottom device layer and a top device layer. The bottom device layer comprises a digital CMOS circuitry layer; and a first bonding oxide layer adjacent to the digital CMOS circuitry layer. The top device layer comprises a substrate; an analog CMOS and photonics circuitry layer formed in a silicon-on-insulator (SOI) layer adjacent to the substrate, the SOI layer having a buried oxide (BOX) with a thickness of greater than or equal to about one micrometer; and a second bonding oxide layer adjacent to a side of the analog CMOS and photonics circuitry layer opposite the substrate. The bottom device layer is bonded to the top device layer by an oxide-to-oxide bond between the first bonding oxide layer and the second bonding oxide layer.
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Assefa Solomon
Chen Kuan-Neng
Koester Steven J.
Vlasov Yurii A.
Alexanian Vazken
International Business Machines - Corporation
Michael J. Chang, LLC
Naraghi Ali
Such Matthew W
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