Isolated bipolar transistor

Details Isolated bipolar transistor Isolated bipolar transistor

2011-03-08

2011-03-08

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S197000, C257S477000

Reexamination Certificate

active

07902630

ABSTRACT:
An isolated bipolar transistor formed in a P-type semiconductor substrate includes an N-type submerged floor isolation region and a filled trench extending downward from the surface of the substrate to the floor isolation region. Together the floor isolation region and the filled trench form an isolated pocket of the substrate which contains the bipolar transistor. The collector of the bipolar transistor may comprise the floor isolation region. The substrate does not contain an epitaxial layer, thereby overcoming the many problems associated with fabricating the same.

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