Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-04-19
2011-04-19
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE33062
Reexamination Certificate
active
07928574
ABSTRACT:
A ball grid array device with an insulating substrate (110) having metal traces (106, for example copper, about 18 μm thick) with sidewalls (108) at right angles to the trace top. The traces are grouped in a first (120) and a second set (121). The first set traces have the top surface covered by a thin noble metal (for example a nickel layer (130) about 0.1 μm thick and an outermost gold layer (131) about 0.5 μm thick), while the sidewalls are un-covered by the noble metal. About 1.5 μm are thus gained for the trace spacing; oxidation of the trace sidewalls is enabled. The second set traces have the top surface un-covered by the noble metal; the traces are covered by an insulating soldermask. A semiconductor chip (101) with terminals (102) is attached to the substrate with the terminals connected to the noble metal of the first set traces, either by bonding wires (for example gold) or by metal studs (for example gold). The assembled chip and the first set traces are encapsulated in a polymerized compound (160), which adheres to the oxidized trace sidewalls and locks into the trace undercuts at the substrate interface.
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Brady III Wade J.
Monbleau Davienne
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Trinh Hoa B
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