Nitride-based light emitting device

Details Nitride-based light emitting device Nitride-based light emitting device

2011-07-12

2011-07-12

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S015000, C257S028000, C257S022000, C257SE29072

Reexamination Certificate

active

07977665

ABSTRACT:
A nitride-based light emitting device capable of achieving an enhancement in light emission efficiency and an enhancement in reliability is disclosed. The nitride-based light emitting device includes a light emitting layer including a quantum well layer and a quantum barrier layer, and a stress accommodating layer arranged on at least one surface of the quantum well layer of the light emitting layer.

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patent: WO 2006/022497 (2006-03-01), None

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