Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Reexamination Certificate
2011-07-19
2011-07-19
Mandala, Victor (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
C257S076000, C257S077000, C257SE29104, C257SE29246
Reexamination Certificate
active
07982241
ABSTRACT:
A buffer layer formed of Inx1Aly1Gaz1N formed on a base, with an upper part of the buffer layer containing columnar polycrystalline including a grain boundary existing in a direction substantially perpendicular to a surface of the base. The number of grain boundaries in the lower part of the buffer layer is greater than that in the upper part, and a full width at half maximum of an X-ray rocking curve of the upper part is 300-3000 seconds, RMS of the surface of the buffer layer is 0.2 nm-6 nm, and the ratio of the grain boundary width of the crystal grain of the upper part in a direction parallel to the base surface to the formation thickness of the buffer layer is 0.5-1.5.
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Kuraoka Yoshitaka
Miyoshi Makoto
Sumiya Shigeaki
Tanaka Mitsuhiro
Burr & Brown
Mandala Victor
NGK Insulators Ltd.
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