Planarizing method

Details Planarizing method Planarizing method

2011-01-04

2011-01-04

Norton, Nadine G (Department: 1713)

Etching a substrate: processes

Nongaseous phase etching of substrate

Using film of etchant between a stationary surface and a...

C216S083000, C216S095000

Reexamination Certificate

active

07862737

ABSTRACT:
Provided is a planarizing method in which a planarization with high flatness can be performed, without being restricted by the distribution of film thickness in the applied resist film. The planarizing method comprises the steps of: forming a resist film on a film to be planarized formed on a substrate; exposing the resist film with the amounts of exposure light in respective sections into which an area in which the film to be planarized is formed is divided, the amounts of exposure light being determined so as to realize film thicknesses to be left for planarization of the resist film in the respective sections; developing the exposed resist film, to form a resist film pattern with a controlled distribution of film thickness; and etching the resist film pattern and the film to be planarized, until eliminating the thickness amounts to be eliminated of the film to be planarized.

REFERENCES:
patent: 4676868 (1987-06-01), Riley et al.
patent: 5372673 (1994-12-01), Stager et al.
patent: 5450205 (1995-09-01), Sawin et al.
patent: 6440644 (2002-08-01), Sato et al.
patent: A 3-261126 (1991-11-01), None
Marc J. Maddou, Fundamentals of Micromachining, 2002, CRC Press, 2nd Edition, 23-25, 31-32, 43-44.

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