TMR sensor having magnesium/magnesium oxide tunnel barrier

Details TMR sensor having magnesium/magnesium oxide tunnel barrier TMR sensor having magnesium/magnesium oxide tunnel barrier

2011-04-05

2011-04-05

Blouin, Mark (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

07920363

ABSTRACT:
A tunnel junction magnetoresistive sensor having improved TMR performance (dR/R) and improved area resistance. The sensor includes a barrier layer sandwiched between a magnetic pinned layer structure and a magnetic free layer structure. The barrier layer includes a thin layer of Mg and a layer of MgOx. The barrier layer could also include a second thin layer of Mg such that the MgOxlayer is sandwiched between the first and second Mg layers.

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