Group III nitride semiconductor substrate and method for...

Details Group III nitride semiconductor substrate and method for... Group III nitride semiconductor substrate and method for...

2011-04-19

2011-04-19

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

C257S615000, C257SE29089, C438S745000

Reexamination Certificate

active

07928446

ABSTRACT:
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2with a cleaning agent containing an ammonium salt.

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