Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-01-25
2011-01-25
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S775000
Reexamination Certificate
active
07875982
ABSTRACT:
A semiconductor device includes: an interlayer insulation film; a lower interconnection layer; an upper interconnection layer; and a via hole extending through the interlayer insulation film to establish electric connection between the lower and upper interconnections; wherein a plurality of interconnection lines is provided in the lower interconnection layer, and a contact region is formed for contact with the via hole by partially joining at least two interconnection lines, and a void exists in a first region of the interlayer insulation film located between adjacent interconnection lines, and no void exists in a second region of the interlayer insulation film located between a contacting portion of the via hole in the contact region and an interconnection line adjacent to the contact region, whereby reliably preventing any contact between a via hole and a void formed in an interlayer insulation film even when the via hole is greatly displaced.
REFERENCES:
patent: 2003/0132525 (2003-07-01), Yoshihara et al.
patent: 2005/0185486 (2005-08-01), Lee et al.
patent: 11-307531 (1999-11-01), None
Le Thao X
McDermott Will & Emery LLP
Powerchip Semiconductor Corp.
Renesas Electronics Corporation
Tran Thanh Y
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