Semiconductor device with overcurrent protection circuit

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

Reexamination Certificate

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Reexamination Certificate

active

07995319

ABSTRACT:
A semiconductor device1includes an output MOS transistor M2, a sense MOS transistor M3, a voltage conversion circuit20that converts a sense current of the sense MOS transistor M3into a sense voltage, and control MOS transistor M10having a gate and a source which receive the sense voltage therebetween and a drain connected to a gate of the output MOS transistor M2. The voltage conversion circuit20includes a first MOS transistor M21diode-connected and a second MOS transistor M22connected in series to the first transistor M21. A gate of the second transistor M22is connected to a node between a gate control circuit6and a resistor R5which is connected to the gate of the output MOS transistor M2. A variation in threshold voltage caused by characteristic variation of the control MOS transistor M10causes a variation in output current limiting value, but the threshold voltage of the first MOS transistor M21diode-connected varies similarly, whereby the variation in threshold voltage caused by characteristic variation of the control MOS transistor M10is cancelled. As a result, the variation in output current limiting value is suppressed.

REFERENCES:
patent: 5272392 (1993-12-01), Wong et al.
patent: 5422593 (1995-06-01), Fujihira
patent: 5578956 (1996-11-01), Rossi et al.
patent: 5903422 (1999-05-01), Hosokawa
patent: 7626792 (2009-12-01), Mitsuda
patent: 5-235365 (1993-09-01), None
patent: 8-316472 (1996-11-01), None
patent: 2006-303843 (2006-11-01), None

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