Light emitting device, method for manufacturing light...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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Details

C257S079000, C257S094000, C257S099000, C257SE33068, C257SE33069, C257SE33074, C438S029000, C438S033000

Reexamination Certificate

active

07956376

ABSTRACT:
A light emitting device according to the embodiment includes a reflecting layer; an adhesion layer including an oxide-based material on the reflecting layer; an ohmic contact layer on the adhesion layer; and a light emitting structure layer on the ohmic contact layer.

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patent: 2007/0221907 (2007-09-01), Jang et al.
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patent: 2010/0084682 (2010-04-01), Lee et al.
patent: 20-0379693 (2005-03-01), None
patent: 10-2008-0048707 (2008-06-01), None
patent: 10-2009-0015633 (2009-02-01), None
patent: WO 2006/043796 (2006-04-01), None
patent: WO 2007/124708 (2007-11-01), None

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