Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular dopant concentration or concentration profile
Reexamination Certificate
2011-06-28
2011-06-28
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular dopant concentration or concentration profile
C257S040000, C257SE51048, C313S504000, C313S506000
Reexamination Certificate
active
07968904
ABSTRACT:
There is provided an organic electroluminescence device that is high in light emitting efficiency and excellent in driving durability, which contains at least a light emitting layer between an anode and a cathode opposing each other, and further has either 1) an organic layer containing at least a first acceptor and a second acceptor between the light emitting layer and the anode, in which the first acceptor is a metal compound and the second acceptor is an organic compound which does not contain a metal, or 2) an organic layer containing a metal oxide as an acceptor between the light emitting layer and the anode, in which a concentration of the metal oxide in the organic layer is varied in a thickness direction and the concentration is lower in a portion near the light emitting layer than a portion near the anode.
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Birch & Stewart Kolasch & Birch, LLP
FUJIFILM Corporation
Landau Matthew C
Snow Colleen E
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