III-nitride heterojunction semiconductor device and method...

Details III-nitride heterojunction semiconductor device and method... III-nitride heterojunction semiconductor device and method...

2011-06-21

2011-06-21

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S194000, C257SE29194

Reexamination Certificate

active

07964895

ABSTRACT:
A III-nitride heterojunction power semiconductor device having a barrier layer that includes a region of reduced nitrogen content.

REFERENCES:
patent: 6830949 (2004-12-01), Senda et al.
patent: 6849882 (2005-02-01), Chavarkar et al.
patent: 6878593 (2005-04-01), Khan et al.
patent: 2003/0020092 (2003-01-01), Parikh et al.
patent: 2004/0041169 (2004-03-01), Ren et al.
International Search Report issued Apr. 2, 2008 in corresponding PCT Application Serial No. PCT/US07/021407.

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