Triple-layer semiconductor nanoparticle and triple-layer...

Details Triple-layer semiconductor nanoparticle and triple-layer... Triple-layer semiconductor nanoparticle and triple-layer...

2011-07-05

2011-07-05

Le, H. (Holly) T (Department: 1788)

Stock material or miscellaneous articles

Coated or structually defined flake, particle, cell, strand,...

Particulate matter

C428S212000, C977S774000, C977S813000, C977S815000, C977S825000, C977S832000

Reexamination Certificate

active

07972694

ABSTRACT:
A semiconductor nanoparticle and semiconductor nanorod that have optical characteristics (luminescence intensity and emission lifetime) superior to those of conventional core/shell nanosized semiconductors. There are provided a triple-layer semiconductor nanoparticle, and triple-layer semiconductor nanorod, having an average particle diameter of 2 to 50 nm and comprising a core layer, an interlayer and a shell layer, wherein the layers are composed of different crystals, and wherein the crystal constructing the shell layer exhibits a band gap greater than that of the crystal constructing the core layer, and wherein the crystal constructing the interlayer has a lattice constant assuming a value between those of the crystal constructing the core layer and the crystal constructing the shell layer.

REFERENCES:
patent: 7200318 (2007-04-01), Banin et al.
patent: 7390568 (2008-06-01), Kim et al.
patent: 7431867 (2008-10-01), Okada et al.
patent: 7534488 (2009-05-01), Alivisatos et al.
patent: 2005/0002635 (2005-01-01), Banin et al.
patent: 2009/0230382 (2009-09-01), Banin et al.
patent: 2009/0236563 (2009-09-01), Goan et al.
patent: 2010/0096599 (2010-04-01), Goan et al.
patent: 2002-121549 (2002-04-01), None
patent: 2002-283768 (2002-10-01), None
patent: 2005-306533 (2005-11-01), None
patent: 2007-279550 (2007-10-01), None
patent: 2005-172429 (2008-07-01), None
Lattice Constants (siliconfareast.com), 2004.
Properties of the II-VI compound semiconductors, 1999.
International Search Report for International Application No. PCT/JP2006/323559 mailed Mar. 6, 2007.
Office Action for Japanese Patent Application No. 2007-281481 mailed Sep. 29, 2009 with English translation.

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