Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2011-07-12
2011-07-12
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185090, C365S185180, C365S200000
Reexamination Certificate
active
07978512
ABSTRACT:
A semiconductor memory system includes: a memory cell array having a plurality of memory cells arranged therein, the plurality of memory cells capable of storing N bits of information in each memory cell (where N is a natural number more than 3, other than a power of two); a control circuit configured to control read, write, and erase operations on the memory cell array; and an ECC circuit configured to correct data read from the memory cell array, based on redundant data. The memory cells that share one of word lines and can be written or read at a time are configured to store multiple pages of data therein. A total amount of data stored in the multiple pages is set to a power-of-two number of bits, and the redundant data is stored in a residual portion of the multiple pages.
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Japanese Office Action issued on Feb. 1, 2011, in the corresponding Japanese Patent Application No. 2008-249531 (with English Translation).
Kabushiki Kaisha Toshiba
Lam David
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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