Mask blank and mask

Details Mask blank and mask Mask blank and mask

2011-07-05

2011-07-05

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

C430S005000

Reexamination Certificate

active

07972750

ABSTRACT:
The mask blank is patterned to form a corresponding mask having a light shielding film pattern with enhanced resolution. A mask blank (10) on which a chemically amplified resist film (20) is formed, the mask blank (10) comprising a substrate (12), a light shielding film (13) provided on the substrate (12), and a resist underlying film (18) provided on the light shielding film (13), for suppressing the deactivation of the chemically amplified resist film (20). When the light shielding film (13) is etched using the patterned chemically amplified resist film (20) as a mask, the etching rate of the deactivation preventive film (18) is higher than the etching rate of the chemically amplified resist film (20).

REFERENCES:
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patent: 2008/0070132 (2008-03-01), Hashimoto et al.
patent: 2009/0155698 (2009-06-01), Yamada et al.
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patent: 2007029826 (2007-03-01), None
JP-2003-107675 English Translation with abstract, 8 pages, Apr. 9, 2003.
Korean Office Action corresponding to Korean Patent Application No. 10-2008-7017677, Dec. 21, 2009.
German Office Action, dated Oct. 2, 2009 (corresponding to German Patent Application No. 11 2006 003 495.2-51).

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