Refractory metal ohmic contacts and method

Details Refractory metal ohmic contacts and method Refractory metal ohmic contacts and method

1989-07-25

1992-03-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437189, 437192, 437 22, 437912, 437944, 437 80, 148DIG100, 148DIG105, H01L 2144

Patent

active

050932802

ABSTRACT:
A process for forming refractory metal ohmic contacts comprises masking a group III-V semiconductor substrate and opening windows thereon. Metal ions are implanted through the window to a sufficient concentration to connect to electronic features in the substrate. Following implantation, a refractory metal ohmic contact is deposited in the same windows and is passivated. Next, the implanted ions are activated by annealing so the refractory metal ohmic contacts are electrically connected to the electrical features in the substrate.

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