GaN based semiconductor light emitting device and lamp

Details GaN based semiconductor light emitting device and lamp GaN based semiconductor light emitting device and lamp

2011-06-28

2011-06-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

C438S022000, C438S029000, C438S032000, C438S042000, C438S044000, C257S014000, C257S076000, C257S079000, C257S094000, C257S098000, C257SE21131

Reexamination Certificate

active

07968361

ABSTRACT:
A method for producing a gallium nitride based compound semiconductor light emitting device which is excellent in terms of the light emitting properties and the light emission efficiency and a lamp is provided. In such a method for producing a gallium nitride based compound semiconductor light emitting device, which is a method for producing a GaN based semiconductor light emitting device having at least a buffer layer, an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer on a translucent substrate, on which an uneven pattern composed of a convex shape and a concave shape is formed, the buffer layer is formed by a sputtering method conducted in an apparatus having a pivoted magnetron magnetic circuit and the buffer layer contains AlN, ZnO, Mg, or Hf.

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