Porous insulating compounds and method for making same

Synthetic resins or natural rubbers -- part of the class 520 ser – Synthetic resins – Cellular products or processes of preparing a cellular...

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521 61, 521 62, 521 64, 521 841, 521 90, 521134, 521154, C09J 902

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active

061628387

ABSTRACT:
A method of forming a porous insulating composition comprising the steps of (A) providing at least one organic sacrificial material/dielectric material composition comprising at least one organic sacrificial material and at least one dielectric material; and (B) removing the at least one organic sacrificial material in the at least one organic sacrificial material/dielectric material composition, in order to generate pores in the at least one dielectric material. Also disclosed is a composition useful in making a porous insulator, comprising a heat-activated, pore-forming, sacrificial material; and a dielectric material. Alternatively, the composition useful in making a porous insulator, comprises at least one pore-forming, organic sacrificial material; and at least one dielectric material, wherein the at least one pore-forming, material is a norbornene-type polymer.

REFERENCES:
patent: 3933772 (1976-01-01), Takahashi et al.
patent: 4460712 (1984-07-01), Blizzard et al.
patent: 4923678 (1990-05-01), Benedikt et al.
patent: 4987101 (1991-01-01), Kaantra et al.
patent: 5011730 (1991-04-01), Tenney et al.
patent: 5049632 (1991-09-01), Asrar
patent: 5103288 (1992-04-01), Sakamoto et al.
patent: 5117327 (1992-05-01), Asrar et al.
patent: 5135595 (1992-08-01), Acocella et al.
patent: 5139851 (1992-08-01), Acocella et al.
patent: 5139852 (1992-08-01), Baise et al.
patent: 5180754 (1993-01-01), Morita
patent: 5266126 (1993-11-01), Deguchi et al.
patent: 5274026 (1993-12-01), Benedikt et al.
patent: 5277725 (1994-01-01), Acocella et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5358975 (1994-10-01), Anderson
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5468819 (1995-11-01), Goodall et al.
patent: 5508542 (1996-04-01), Geiss et al.
patent: 5569711 (1996-10-01), Yamamoto et al.
patent: 5585433 (1996-12-01), Yamamoto et al.
patent: 5635419 (1997-06-01), Geiss et al.
patent: 5679444 (1997-10-01), Davis et al.
patent: 5681900 (1997-10-01), Murakami et al.
patent: 5700844 (1997-12-01), Hedrick et al.
patent: 5709805 (1998-01-01), Davis et al.
patent: 5744399 (1998-04-01), Rostoker et al.
patent: 5756021 (1998-05-01), Hedrick et al.
patent: 5767014 (1998-06-01), Hawker et al.
patent: 5773197 (1998-06-01), Carter et al.
patent: 5776990 (1998-07-01), Hedrick et al.
patent: 5869880 (1999-02-01), Grill et al.
patent: 5883219 (1999-03-01), Carter et al.
patent: 5895263 (1999-04-01), Carter et al.
patent: 5953627 (1999-09-01), Carter et al.
patent: 5962113 (1999-10-01), Brown et al.
Materials Research Society, Symposium Proceedings, Low-Dielectric Constant Materials IV, vol. 511, Conference Apr. 1998 and Publication Jun. 1998.
Advanced Materials, Research News, Templating Nanoporosity in Thin-Film Dielectric Insulators, Sep. 1998.
Deposition, Air Gaps Lower .kappa. of Interconnect Dielectrics, Feb. 1999, pp. 51-58.
IBM Technical Disclosures Bulletin, "Low Dielectric Constant Inorganic Insulators for Beol and Packaging Applications", vol. 37, No. 11, Nov. 1994, pp. 497-498.
IBM Technical Disclosures Bulletin, "Reduced Capacitance Interconnect System Using Decomposition of Air Gap Filler Material", vol. 38, No. 9, Sep. 1, 1995, PP. 137-140.
"Controlling Porosity in Bridged Polysilsesquioxanes Through Elimination Reactions", Mat. Res. Symp. Proc. vol. 435, 1996, pp. 277-282.
IEEE Transactions on Electron Devices, "Use of Gas as Low-.kappa. Interlayer Dielectric in LSI's: Demonstration of Feasibility", vol. 44, No. 11, Nov. 1997.
IEEE Electron Device Letters, "Air-Gap Formation During IMD Deposition to Lower Interconnection Capacitance", vol. 19, No. 1, Jan. 1998.
Electrochemical and Solid-State Letters, Low .kappa. Porous Methyl Silsesquioxane and Spin-On-Glass, pp. 77-79, Sep. 9, 1998.
Technology News, Wafer Processing, Semiconductor International, Mar. 1998, p. 38.

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