Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-07-12
2011-07-12
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S080000, C257S432000, C257SE31001, C257SE31095, C257SE31097, C257SE33001, C250S208500
Reexamination Certificate
active
07977681
ABSTRACT:
A photo sensor includes a light incidence unit including a plurality of light incidence layers, the light incidence unit having a varying light transmittance with respect to external light, and a photo sensing unit including a plurality of photo sensing elements, the photo sensing unit being configured to output electrical signals in accordance with an amount of light transmitted through the light incidence unit to determine intensity of the external light, each of the photo sensing elements being configured to output electrical signals in accordance with light transmitted through a respective light incidence layer.
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Choi Byong-Deog
Im Ki-Ju
Kim Won-sik
Lee Yun-gyu
Park Hye-hyang
Blum David S
Lee & Morse P.C.
Samsung Mobile Display Co., Ltd.
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