Semiconductor device

Details Semiconductor device Semiconductor device

2011-01-18

2011-01-18

Toledo, Fernando L (Department: 2895)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S760000, C257SE23141, C257S774000, C257S211000

Reexamination Certificate

active

07872353

ABSTRACT:
A semiconductor device including at least two layers of interlayer-insulator-films stacked above a substrate and at least partially formed by a low-relative-dielectric-constant-film having a relative-dielectric-constant of 3.4 or less respectively, a plurality of wirings provided at least one within each of the interlayer-insulator-film and at least partially located within the low-relative-dielectric-constant-films, a plurality of plugs provided at least one within each of the interlayer-insulator-film and connected to a lower part of the wirings, and a plurality of reinforcement members provided at least one within each of the interlayer-insulator-film with being separated from the wirings at a predetermined interval, electrically cut from the wirings and the plugs, and at least partially located within the low-relative-dielectric-constant-films, and wherein, the interlayer-insulator-films, the wirings, the plugs, and the reinforcement members satisfy a predetermined relation for each of the interlayer-insulator-film.

REFERENCES:
patent: 6958542 (2005-10-01), Hasunuma et al.
patent: 7180192 (2007-02-01), Hasunuma et al.
patent: 7285859 (2007-10-01), Hasunuma et al.
patent: 2002/0047207 (2002-04-01), Sekiguchi
patent: 2005/0167842 (2005-08-01), Nakamura et al.
patent: 2006/0145347 (2006-07-01), Aida
patent: 2007/0204243 (2007-08-01), Ito et al.
patent: 2005-150389 (2005-06-01), None

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