Process for the production of a bipolar integrated circuit

Details Process for the production of a bipolar integrated circuit Process for the production of a bipolar integrated circuit

1976-07-02

1977-09-13

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

29578, 29580, 148187, 156643, 156647, 204192R, 250251, 357 20, 357 40, 357 48, 357 55, 357 56, 357 91, H01L 21265, H01L 21302

Patent

active

040479757

ABSTRACT:
A method of making a bipolar integrated circuit which requires neither an epitaxial layer nor a buried layer. The required doping of a semiconductor substrate, e.g., silicon, is obtained by a series of etching steps alternated with ion implantation steps of a selected impurity type, and heat treatment steps. The emitter and collector zones of a transistor are formed on sloping walls of adjacent troughs formed in a semiconductor substrate. The base zone of a transistor is formed on the confronting sloping wall of one of these troughs. Lead conductors are located in the troughs along sloping wall portions of the troughs.

REFERENCES:
patent: 3472751 (1969-10-01), King
patent: 3657542 (1972-04-01), Futch, Jr. et al.
patent: 3675313 (1972-07-01), Driver et al.
patent: 3823352 (1974-07-01), Pruniaux et al.
patent: 3884788 (1975-05-01), Maciolek et al.
patent: 3920482 (1975-11-01), Russell
patent: 3950233 (1976-04-01), Rosvold
patent: 3966514 (1976-06-01), Feng et al.
patent: 3974298 (1976-03-01), Tiefert

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