Tungsten-titanium-chromium/gold semiconductor metallization

Details Tungsten-titanium-chromium/gold semiconductor metallization Tungsten-titanium-chromium/gold semiconductor metallization

1978-11-22

1980-10-28

James, Andrew J.

357 13, 357 56, 357 71, H01L 2348, H01L 2946, H01L 2962

Patent

active

042310580

ABSTRACT:
Improved TRAPATT diodes in which the improvement comprises a high-temperae metallization on silicon from which the diodes are formed.
Metallization is applied to a silicon wafer by sputtering a layer of titanium, chromium, tungsten alloy followed by a gold layer. The desired diode shape and size is defined in the gold layer by use of a pattern of the proper shape and size in combination with a photolithographic process. The metallization layers and the silicon are then etched so as to form a plurality of individual shaped (mesa or ring structure) TRAPATT diodes. Such diodes can withstand 610.degree. C. for one hour without degradation.

REFERENCES:
patent: 3010057 (1961-11-01), Albert
patent: 3653999 (1972-04-01), Fuller
patent: 3833842 (1974-09-01), Cunningham et al.
patent: 3921192 (1975-11-01), Goronkin et al.

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