Strained quantum well laser diode

Details Strained quantum well laser diode Strained quantum well laser diode

1992-06-22

1993-11-16

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

257 18, H01S 319

Patent

active

052630404

ABSTRACT:
A strained quantum well laser diode in which higher reliability is achieved by reducing the degrading effects of stress. By using an active layer orientation that is equal or close to (111), it is possible to suppress degradation caused by stress, which acts in a direction parallel to the quantum well layer.

REFERENCES:
patent: 4894836 (1990-01-01), Hayakawa et al.
patent: 4974231 (1990-11-01), Gomyo
patent: 5146466 (1992-09-01), Hamada et al.
W. T. Tsang, "Semiconductors and Semimetals," vol. 24, pp. 397, Academic Press, San Diego (1987).
Physics and Applications of Semiconductor Superlattices, Physical Society of Japan Annals, Baifukan, p. 213 (1984).
P. Bour et al., SPIE vol. 1219, Laser-Diode Technology and Application II, p. 43 (1990).
G. C. Osbourn, "Semiconductors and Semimetals," vol. 24, p. 459, (1987).

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