Semiconductor device and manufacturing method thereof

Details Semiconductor device and manufacturing method thereof Semiconductor device and manufacturing method thereof

2011-01-04

2011-01-04

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified configuration

C257S202000, C257S288000, C257S773000, C257SE27062

Reexamination Certificate

active

07863753

ABSTRACT:
A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region; and a first gate electrode formed on the isolation region and the active region and including a first region on the isolation region. The first region has a pattern width in a gate length direction larger than a pattern width of the first gate electrode on the active region. The first region includes a part having a film thickness different from a film thickness of the first gate electrode on the active region.

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Shuo-Yen Chou et al., “Study of Mask Corner Rounding Effects on Lithographic Patterning for 90-nm Technology Node and Beyond,” Proceedings of SPIE vol. 5446, 2004, pp. 508-515.

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