Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-01-04
2011-01-04
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S202000, C257S288000, C257S773000, C257SE27062
Reexamination Certificate
active
07863753
ABSTRACT:
A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region; and a first gate electrode formed on the isolation region and the active region and including a first region on the isolation region. The first region has a pattern width in a gate length direction larger than a pattern width of the first gate electrode on the active region. The first region includes a part having a film thickness different from a film thickness of the first gate electrode on the active region.
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Kudo Chiaki
Ogawa Hisashi
McDermott Will & Emery LLP
Monbleau Davienne
Panasonic Corporation
Rodela Eduardo A
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