Semiconductor device and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration

Reexamination Certificate

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Details

C257S202000, C257S288000, C257S773000, C257SE27062

Reexamination Certificate

active

07863753

ABSTRACT:
A semiconductor device includes: an isolation region formed in a semiconductor substrate; an active region surrounded by the isolation region; and a first gate electrode formed on the isolation region and the active region and including a first region on the isolation region. The first region has a pattern width in a gate length direction larger than a pattern width of the first gate electrode on the active region. The first region includes a part having a film thickness different from a film thickness of the first gate electrode on the active region.

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Extended European Search Report issued in European Patent Application No. EP 07116351.3-1235/1903611, dated Mar. 26, 2009.
Shuo-Yen Chou et al., “Study of Mask Corner Rounding Effects on Lithographic Patterning for 90-nm Technology Node and Beyond,” Proceedings of SPIE vol. 5446, 2004, pp. 508-515.

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