Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2011-01-11
2011-01-11
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S103000, C257SE33005, C257SE33067
Reexamination Certificate
active
07868342
ABSTRACT:
A semiconductor light emitting device includes a silicon substrate, a p-type semiconductor layer provided on the silicon substrate, a n-type semiconductor layer provided on the silicon substrate, the n-type semiconductor layer adjoining the p-type semiconductor layer, and a light emitting section formed at a p-n homojunction between the p-type semiconductor layer and the n-type semiconductor layer. The p-n homojunction is substantially perpendicular to a major surface of the silicon substrate. The p-n homojunction is corrugated with a period matched with an integer multiple of an emission wavelength at the light emitting section.
REFERENCES:
patent: 3622906 (1971-11-01), Nyul
patent: 3675064 (1972-07-01), Coleman et al.
Shin-ichi Saito, et al., “Electro-Luminescence from Ultra-Thin Silicon”, Japanese Journal of Applied Physics, vol. 45, No. 27, 2006, pp. L679-L682.
Kabushiki Kaisha Toshiba
Mandala Victor A
Moore Whitney
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
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