Method of manufacturing Bi-based oxide superconductor thin...

Superconductor technology: apparatus – material – process – Processes of producing or treating high temperature... – Coating

Reexamination Certificate

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C427S062000, C505S121000, C505S125000, C505S729000, C505S782000

Reexamination Certificate

active

07981840

ABSTRACT:
A well-crystallized a-axis (or b-axis) oriented Bi-based oxide superconductor thin film is manufactured in order to obtain a high performance layered Josephson junction using a Bi-based oxide superconductor. In manufacturing a well-crystallized a-axis oriented Bi-based oxide superconductor thin film, a (110) plane of a single crystal substrate of LaSrAlO4or a vicinal cut substrate of a single crystal of LaSrAlO4is used, on which an a-axis oriented Bi-2223 or Bi-2201 thin film is heteroepitaxially grown at a low film forming temperature T1, then homoepitaxially grown on the grown film at a high film forming temperature T2(double temperature growth method). Although it is difficult to grow an a-axis oriented film directly on a substrate at a high temperature T2, an a-axis oriented Bi-2223 or Bi-2201 thin film is formed on the base by previously forming the base film at low deposition temperature.

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