Extremely high-speed switchmode DC-DC converters

Details Extremely high-speed switchmode DC-DC converters Extremely high-speed switchmode DC-DC converters

2011-03-15

2011-03-15

Han, Jessica (Department: 2838)

Electricity: power supply or regulation systems

In shunt with source or load

Using a three or more terminal semiconductive device

C323S274000, C323S284000

Reexamination Certificate

active

07906944

ABSTRACT:
Switchmode DC-DC power converters using one or more non-Silicon-based switching transistors and a Silicon-based (e.g. CMOS) controller are disclosed. The non-Silicon-based switching transistors may comprise, but are not necessarily limited to, III-V compound semiconductor devices such as gallium arsenide (GaAs) metal-semiconductor field effect transistors (MESFETs) or heterostructure FETs such as high electron mobility transistors (HEMTs). According to an embodiment of the invention, the low figure of merit (FoM), τFET, of the non-Silicon-based switching transistors allows the converters of the present invention to be employed in envelope tracking amplifier circuits of wireless devices designed for high-bandwidth technologies such as, for example, EDGE and UMTS, thereby improving the efficiency and battery saving capabilities of the wireless devices.

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