Forming of the last metallization level of an integrated...

Details Forming of the last metallization level of an integrated... Forming of the last metallization level of an integrated...

2011-04-05

2011-04-05

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C438S622000

Reexamination Certificate

active

07919864

ABSTRACT:
An integrated circuit including one or several metallization levels, metal conductive strips and metal contact pads being formed on the last metallization level, the last level being covered with a passivation layer in which are formed openings above the contact pads. The thickness of the pads, at least at the level of their portions not covered by the passivation layer, is smaller than the thickness of said conductive strips.

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