Reduction of surface recombination current in GaAs devices

Details Reduction of surface recombination current in GaAs devices Reduction of surface recombination current in GaAs devices

1979-01-30

1980-10-28

Edlon, Martin H.

357 52, 357 54, 357 17, 357 67, 357 30, H01B 29161

Patent

active

042310504

ABSTRACT:
Surface recombination current in GaAs devices is reduced by means of a semi-insulating, oxygen, iron or chromium doped monocrystalline layer of AlGaAs grown by MBE. The AlGaAs layer is grown on a GaAs body and is then masked. Diffusion of suitable impurities through a window in the mask converts the exposed portions of the AlGaAs layer to low resistivity and modifies the conductivity of the underlying zone of the GaAs body. The peripheral portions of the AlGaAs layer, however, remain semi-insulating and are effective to reduce the surface recombination velocity - diffusion length product by more than an order of magnitude.

REFERENCES:
patent: 3990096 (1976-11-01), Namizaiki
patent: 4062035 (1977-12-01), Winstel
patent: 4141021 (1979-02-01), Decker
patent: 4160261 (1979-07-01), Casey et al.
Casey, Appl. Phys. Lett., vol. 32, No. 10, May 15, 1978, pp. 678-679.

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