Method of defining a conductive layer

Details Method of defining a conductive layer Method of defining a conductive layer

1999-06-08

2000-12-19

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438719, 438720, 438740, H01L 2100

Patent

active

061627313

ABSTRACT:
A method of defining the conductive layer is described in which a substrate comprises a dielectric layer and a conductive layer is formed covering the entire substrate. A common photolithography and etching process is conducted to form a wide trench pattern. An adjustment structure is also formed next to the sidewall on both sides of the trench such that the distance between the adjustment structures is same as the desired width of the conductive structure. After which, a cover layer is formed to fill the trench. Using the cover layer as a self-aligned hard mask, an anisotropic etching process is conducted to form a conductive structure.

REFERENCES:
patent: 5132236 (1992-07-01), Doan
patent: 5658472 (1997-08-01), Bartha et al.
patent: 6051497 (2000-04-01), Ploessl
patent: 6087262 (2000-07-01), Yang et al.

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