Semiconductor device and process for fabricating the same

Details Semiconductor device and process for fabricating the same Semiconductor device and process for fabricating the same

2011-05-17

2011-05-17

Andújar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Ball or nail head type contact, lead, or bond

C257S777000, C257S723000, C257S737000, C257S738000, C257S686000, C257SE25010, C257SE25013

Reexamination Certificate

active

07944058

ABSTRACT:
A thin stacked semiconductor device has a plurality of circuits that are laminated and formed sequentially in a specified pattern to form a multilayer wiring part. At the stage for forming the multilayer wiring part, a filling electrode is formed on the semiconductor substrate such that the surface is covered with an insulating film, a post electrode is formed on specified wiring at the multilayer wiring part, a first insulating layer is formed on one surface of the semiconductor substrate, the surface of the first insulating layer is removed by a specified thickness to expose the post electrode, and the other surface of the semiconductor substrate is ground to expose the filling electrode and to form a through-type electrode, A second insulating layer is formed on one surface of the semiconductor substrate while exposing the forward end of the through-type electrode, and bump electrodes are formed on both electrodes.

REFERENCES:
patent: 3746934 (1973-07-01), Stein
patent: 5382827 (1995-01-01), Wang et al.
patent: 5952718 (1999-09-01), Ohtsuka et al.
patent: 6362529 (2002-03-01), Sumikawa et al.
patent: 6492718 (2002-12-01), Ohmori
patent: 6503778 (2003-01-01), Yamauchi et al.
patent: 6774478 (2004-08-01), Eto et al.
patent: 6809421 (2004-10-01), Hayasaka et al.
patent: 6873054 (2005-03-01), Miyazawa et al.
patent: 6995455 (2006-02-01), Nemoto et al.
patent: 7071719 (2006-07-01), Sato et al.
patent: 7253527 (2007-08-01), Tanida et al.
patent: 7259454 (2007-08-01), Tanida et al.
patent: 7276799 (2007-10-01), Lee et al.
patent: 7365416 (2008-04-01), Kawabata et al.
patent: 7372137 (2008-05-01), Saeki
patent: 7459777 (2008-12-01), Nakamura
patent: 7537959 (2009-05-01), Lee et al.
patent: 7598617 (2009-10-01), Lee et al.
patent: 2002/0009634 (2002-01-01), Oogaku
patent: 2002/0028532 (2002-03-01), Tsunashima
patent: 2002/0030266 (2002-03-01), Murata
patent: 2002/0109236 (2002-08-01), Kim et al.
patent: 2003/0060034 (2003-03-01), Beyne et al.
patent: 2003/0062620 (2003-04-01), Shibata
patent: 2003/0127736 (2003-07-01), Eto et al.
patent: 2003/0183943 (2003-10-01), Swan et al.
patent: 2004/0080013 (2004-04-01), Kimura et al.
patent: 2004/0145044 (2004-07-01), Sugaya et al.
patent: 2005/0046002 (2005-03-01), Lee et al.
patent: 2005/0263869 (2005-12-01), Tanaka et al.
patent: 2006/0038300 (2006-02-01), Tanida et al.
patent: 2006/0073701 (2006-04-01), Koizumi et al.
patent: 2007/0018320 (2007-01-01), Tanida et al.
patent: 2007/0096292 (2007-05-01), Machida
patent: 2007/0126085 (2007-06-01), Kawano et al.
patent: 2007/0187812 (2007-08-01), Izumi
patent: 2007/0262470 (2007-11-01), Ichiryu et al.
patent: 2008/0061402 (2008-03-01), Ishihara et al.
patent: 2008/0224322 (2008-09-01), Shinogi
patent: 10047963 (2001-03-01), None
patent: 10049551 (2001-05-01), None
patent: 10-027824 (1998-01-01), None
patent: 10-223833 (1998-08-01), None
patent: 2001-250913 (2001-09-01), None
patent: 2003-046057 (2003-02-01), None
patent: 2003-110084 (2003-04-01), None
patent: 2003-309221 (2003-10-01), None
The Institute of Electrical Engineers ofJapan, Research Reports of Materials Research Society, vol. EFM-02-6, No. 1-8, p. 31-35.
Journal of the Surface Finishing Society of Japan, vol. 52, No. 7, 2001, p. 479-483.

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