Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2011-06-07
2011-06-07
Smith, Matthew S (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257S065000, C257S078000, C257SE29004, C257SE33025
Reexamination Certificate
active
07956360
ABSTRACT:
A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.
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DenBaars Steven P.
Haskell Benjamin A.
McLaurin Melvin B.
Nakamura Shuji
Speck James Stephen
Gates & Cooper LLP
Japan Science and Technology Agency
Jefferson Quovaunda
Smith Matthew S
The Regents of the University of California
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