Display device, method for manufacturing the same, and...

Details Display device, method for manufacturing the same, and... Display device, method for manufacturing the same, and...

2011-07-19

2011-07-19

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S088000, C257S072000, C257S369000, C257SE33001, C257SE33053

Reexamination Certificate

active

07982220

ABSTRACT:
In a case where a p-channel thin film transistor is used as a thin film transistor that is electrically connected to a light-emitting element and drives the light-emitting element, a value of cutoff current of the p-channel thin film transistor is made lower than that of a p-channel thin film transistor of a driver circuit. Specifically, channel doping is selectively performed on a semiconductor layer of a thin film transistor included in a pixel.

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