Magnetic tunnel transistor having a base structure that...

Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07916435

ABSTRACT:
A magnetic tunnel transistor (MTT) is formed having an emitter that is configured to provide unpolarized electrons. A composite base is configured to provide polarization of the unpolarized electrons injected into the base by the emitter based upon a magnetic orientation of the free layer and the self-pinned layer of the base.

REFERENCES:
patent: 4847666 (1989-07-01), Heremans et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5390061 (1995-02-01), Nakatani et al.
patent: 5521500 (1996-05-01), Schuhl et al.
patent: 5747859 (1998-05-01), Mizushima et al.
patent: 5757056 (1998-05-01), Chui
patent: 5962905 (1999-10-01), Kamiguchi et al.
patent: 6052263 (2000-04-01), Gill
patent: 6069820 (2000-05-01), Inomata et al.
patent: 6072718 (2000-06-01), Abraham et al.
patent: 6124711 (2000-09-01), Tanaka et al.
patent: 6165287 (2000-12-01), Sato et al.
patent: 6191926 (2001-02-01), Everitt et al.
patent: 6219208 (2001-04-01), Gill
patent: 6396734 (2002-05-01), Ishikawa et al.
patent: 6480365 (2002-11-01), Gill et al.
patent: 6636398 (2003-10-01), Sasaki et al.
patent: 6781798 (2004-08-01), Gill
patent: 6919608 (2005-07-01), Gregg
patent: 7016167 (2006-03-01), Fontana, Jr. et al.
patent: 7230804 (2007-06-01), Gill
patent: 2002/0024780 (2002-02-01), Mao et al.
patent: 2002/0044398 (2002-04-01), Sasaki et al.
patent: 2002/0064595 (2002-05-01), Nomura et al.
patent: 2005/0017314 (2005-01-01), Gill
patent: 2006/0152860 (2006-07-01), Childress et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetic tunnel transistor having a base structure that... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic tunnel transistor having a base structure that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic tunnel transistor having a base structure that... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2705797

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.