Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-03-22
2011-03-22
Souw, Bernard E (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492100, C250S492300
Reexamination Certificate
active
07910898
ABSTRACT:
Beam detectors configuring a beam monitor are connected to a single current measurement apparatus through respective switches. If a width of a beam incident hole of each of the beam detectors32in the X direction is Wf, a gap between the beam incident holes of adjacent beam detectors in the X direction is Ws, a beam width of the ion beam in the X direction is Wb, a total number of beam detectors is “p”, and “n” is an integer of 0≦n≦(p−2) and satisfying Wb<{n·Wf+(n+1)Ws}, a measuring process of receiving the ion beam by the beam monitor and measuring the waveforms of the beam currents flowing into the current measurement apparatus in a state in which the plurality of switches skipped by “n” are simultaneously switched ON and a switching process of switching the switches simultaneously switched ON under the condition, are repeated.
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Patent Abstracts of Japan for Japanese Publication No. 09-055179, Publication date Feb. 25, 1997 (1 page).
Nissin Ion Equipment Co., Ltd.
Osha • Liang LLP
Smyth Andrew
Souw Bernard E
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