Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2011-05-03
2011-05-03
Pert, Evan (Department: 2823)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220, C219S121680, C219S121690
Reexamination Certificate
active
07935941
ABSTRACT:
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
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Response to Of
Baird Brian W.
Bruland Kelly J.
Evans Frank G.
Lo Ho Wai
Electro Scientific Industries Inc.
Pert Evan
Stoel Rives LLP
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