Semiconductor light emitting device, its manufacturing...

Details Semiconductor light emitting device, its manufacturing... Semiconductor light emitting device, its manufacturing...

2011-06-21

2011-06-21

Pert, Evan (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S031000, C438S037000, C257SE33023, C257SE21085

Reexamination Certificate

active

07964419

ABSTRACT:
A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

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Japanese Office Action issued on May 11, 2010 in connection with counterpart JP Application No. 2006-303673.
Japanese Office Action issued on Sep. 21, 2010 in connection with JP counterpart appl. No. 2006-303673.

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