Oscillators – Molecular or particle resonant type
Patent
1979-01-29
1980-10-28
Davie, James W.
Oscillators
Molecular or particle resonant type
148174, 148175, 357 18, 357 56, H01S 319
Patent
active
042309972
ABSTRACT:
A buried double heterostructure laser device isdescribed. A wafer of double heterostructure material is formed into narrow mesa stripes. A native oxide coating is formed on the side walls of the mesa. Semiconductor material having an index of refraction which is closely matched to the index of the active region is deposited over the mesa structure. High resistivity polycrystalline material forms on the native oxide and monocrystalline material forms on the top of the mesa. Vertical carrier and optical confinement is achieved by the higher bandgap cladding layers of the double heterostructure configuration. The native oxide acts as an electrical insulator to confine pumping current to the mesa. The closely matched polycrystalline material confines light parallel to the junction plane and prevents excitation of higher order transverse modes. Devices have been fabricated which exhibit cw threshold currents at room temperature as low as 55 mA.
REFERENCES:
patent: 3833435 (1974-09-01), Logan et al.
patent: 4111725 (1978-09-01), Cho et al.
patent: 4163952 (1979-08-01), Thompson et al.
Tuskada, "GaAs-Ga.sub.1-x Al.sub.x As Buried-Heterostructure Injection Lasers," Journal of Applied Physics, vol. 45, No. 11, Nov. 1974, pp. 4899-4906.
Lee et al., "Single-Transverse-Mode Injection Lasers With Embedded Stripe Layer Grown by Molecular Beam Epitaxy," vol. 29, No. 3, 1 Aug. 1976, pp. 164-166.
Hartman Robert L.
Ilegems Marc
Koszi Louis A.
Wagner Wilfried R.
Bell Telephone Laboratories Incorporated
Davie James W.
Urbano Michael J.
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